Kim Min Hwa, Chung Kunook, Moon Dae Young, Jeon Jong-Myeong, Kim Miyoung, Park Jinsub, Nanishi Yasushi, Yi Gyu-Chul, Yoon Euijoon
Hybrid Materials Program (WCU), Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea.
J Nanosci Nanotechnol. 2012 Feb;12(2):1645-8. doi: 10.1166/jnn.2012.4698.
We demonstrated the successful growth of catalyst-free InN nanorods on (0001) Al2O3 substrates using metal-organic chemical vapor deposition. Morphological evolution was significantly affected by growth temperature. At 710 degrees C, complete InN nanorods with typical diameters of 150 nm and length of approximately 3.5 microm were grown with hexagonal facets. theta-2theta X-ray diffraction measurement shows that (0002) InN nanorods grown on (0001) Al2O3 substrates were vertically aligned along c-axis. In addition, high resolution transmission electron microscopy indicates the spacing of the (0001) lattice planes is 0.28 nm, which is very close to that of bulk InN. The electron diffraction patterns also revealed that the InN nanorods are single crystalline with a growth direction along (0001) with (10-10) facets.
我们展示了使用金属有机化学气相沉积法在（0001）Al2O3衬底上成功生长无催化剂的InN纳米棒。生长温度对形态演变有显著影响。在710℃时，生长出了典型直径为150nm、长度约为3.5μm的具有六边形晶面的完整InN纳米棒。θ-2θ X射线衍射测量表明，在（0001）Al2O3衬底上生长的（0002）InN纳米棒沿c轴垂直排列。此外，高分辨率透射电子显微镜表明（0001）晶格平面的间距为0.28nm，这与块状InN的间距非常接近。电子衍射图案还显示，InN纳米棒是单晶的，生长方向沿（0001）且具有（10-10）晶面。
