Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, People's Republic of China.
Nanotechnology. 2011 Jun 10;22(23):235603. doi: 10.1088/0957-4484/22/23/235603. Epub 2011 Apr 7.
Well-aligned tilted Zn-doped InN nanorods have been grown successfully on r-plane sapphire in a horizontal metal-organic chemical vapor deposition system. All of the nanorods are symmetrically tilted in two opposite directions. X-ray diffraction and transmission electron microscopy measurements show that the nanorods are single-crystalline and have exactly the same epitaxial orientation as the a-plane InN film. The nanorod has a new cross sectional shape of an axial symmetry pentagon and the axis of symmetry is the c-axis of the crystal. Zn dopant plays a crucial role in the growth progress, being an important factor in controlling the morphology of the InN nanomaterials and their properties.
在水平金属有机化学气相沉积系统中，成功地在 r 面蓝宝石上生长出了取向良好的倾斜 Zn 掺杂 InN 纳米棒。所有纳米棒都以对称的方式向两个相反的方向倾斜。X 射线衍射和透射电子显微镜测量表明，纳米棒为单晶，与 a 面 InN 薄膜具有完全相同的外延取向。纳米棒具有一个新的轴对称五边形横截面形状，对称轴为晶体的 c 轴。Zn 掺杂剂在生长过程中起着至关重要的作用，是控制 InN 纳米材料的形态及其性能的重要因素。
