Department of Electrical Engineering, Technion-Israel Institute of Technology, Haifa 32000, Israel.
Nanotechnology. 2012 Jun 22;23(24):245603. doi: 10.1088/0957-4484/23/24/245603. Epub 2012 May 28.
The growth of InP nanowires on an InP(111) B substrate is reported. The substrate native oxide was not removed from the surface prior to growth. Nanowires were grown at 400 °C from gold catalysts in a selective area manner, without bulk growth. Unlike SiO(2)-based metal-organic molecular beam epitaxy selective area growth, the growth reported here is mediated by surface diffusion with a characteristic diffusion length of 4 μm, about an order of magnitude larger than values for diffusion on bare substrates. A pre-growth heating treatment at 450 °C was found to increase the yield of nanowire nucleation from the gold catalysts.
本文报道了在 InP(111)B 衬底上生长 InP 纳米线。在生长之前，衬底的本征氧化物没有从表面去除。纳米线在 400°C 下从金催化剂以选择性区域方式生长，没有体相生长。与基于 SiO2 的金属有机分子束外延选择性区域生长不同，这里报道的生长是通过表面扩散介导的，特征扩散长度为 4 μm，大约比在裸衬底上扩散的数值大一个数量级。发现 450°C 的预生长加热处理可以增加金催化剂上纳米线成核的产率。
