在SiO x /Si(111)衬底上选择性区域外延生长InAs纳米线的高产率条件。
Conditions for high yield of selective-area epitaxy InAs nanowires on SiO x /Si(111) substrates.
作者信息
Robson M T, Dubrovskii V G, LaPierre R R
机构信息
Department of Engineering Physics, McMaster University, Hamilton, Ontario, L8S4L7, Canada.
出版信息
Nanotechnology. 2015 Nov 20;26(46):465301. doi: 10.1088/0957-4484/26/46/465301. Epub 2015 Oct 28.
Experimental data and a model are presented which define the boundary values of V/III flux ratio and growth temperature for droplet-assisted nucleation of InAs semiconductor nanowires in selective-area epitaxy on SiO(x)/Si (111) substrates by molecular beam epitaxy. Within these boundaries, the substrate receives a balanced flux of group III and V materials allowing the growth of vertically oriented nanowires as compared to the formation of droplets or crystallites.
本文给出了实验数据和一个模型，该模型定义了通过分子束外延在SiO(x)/Si(111)衬底上进行选择性区域外延生长InAs半导体纳米线时，液滴辅助成核的V/III通量比和生长温度的边界值。在这些边界范围内，衬底接收到III族和V族材料的平衡通量，与形成液滴或微晶相比，这有利于垂直取向纳米线的生长。
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