Sun Xiaojuan, Li Dabing, Song Hang, Chen Yiren, Jiang Hong, Miao Guoqing, Li Zhiming
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 3888 Dongnanhu Road, Changchun, 130033, Peoples' Republic of China.
Nanoscale Res Lett. 2012 May 31;7(1):282. doi: 10.1186/1556-276X-7-282.
In this paper, five-period InGaN/GaN multiple quantum well green light-emitting diodes (LEDs) were grown by metal organic chemical vapor deposition with 405-nm light beam in situ monitoring system. Based on the signal of 405-nm in situ monitoring system, the related information of growth rate, indium composition and interfacial quality of each InGaN/GaN QW were obtained, and thus, the growth conditions and structural parameters were optimized to grow high-quality InGaN/GaN green LED structure. Finally, a green LED with a wavelength of 509 nm was fabricated under the optimal parameters, which was also proved by ex situ characterization such as high-resolution X-ray diffraction, photoluminescence, and electroluminescence. The results demonstrated that short-wavelength in situ monitoring system was a quick and non-destroyed tool to provide the growth information on InGaN/GaN, which would accelerate the research and development of GaN-based green LEDs.
在本文中，采用金属有机化学气相沉积法，利用405nm光束原位监测系统生长了五周期InGaN/GaN多量子阱绿光发光二极管（LED）。基于405nm原位监测系统的信号，获得了每个InGaN/GaN量子阱的生长速率、铟组分和界面质量等相关信息，进而优化生长条件和结构参数以生长高质量的InGaN/GaN绿光LED结构。最后，在优化参数下制备出了波长为509nm的绿光LED，高分辨率X射线衍射、光致发光和电致发光等非原位表征也证实了这一点。结果表明，短波长原位监测系统是一种快速且无损的工具，可提供InGaN/GaN的生长信息，这将加速基于GaN的绿光LED的研发进程。
