Jung Byung Oh, Bae Si-Young, Lee Seunga, Kim Sang Yun, Lee Jeong Yong, Honda Yoshio, Amano Hiroshi
Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi, 464-8603, Japan.
Akasaki Research Center (ARC), Nagoya University, Nagoya, Aichi, 464-8603, Japan.
Nanoscale Res Lett. 2016 Dec;11(1):215. doi: 10.1186/s11671-016-1441-6. Epub 2016 Apr 22.
We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.
我们报道了通过金属有机化学气相沉积（MOCVD）生长的基于氮化镓（GaN）纳米棒的氮化铟镓/氮化镓多量子阱（MQW）核壳结构在三维（3D）发光二极管（LED）中的选择性区域生长及其光学分析。高分辨率透射电子显微镜（HR-TEM）观察揭示了GaN纳米棒的高质量以及InGaN/GaN MQW结构性质在多个晶面上的位置依赖性。光致发光（PL）的激发和温度依赖性揭示了InGaN/GaN核壳纳米棒的m面发射行为。嵌入InGaN/GaN核壳纳米棒的3D LED的电致发光（EL）随着注入电流的增加从绿色变为蓝色。这种现象主要是由于在3D结构上选择性生长的InGaN/GaN核壳MQW中铟的能量梯度和深度局域化。
Zotero 插件
