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一种用于制备稳健超疏水碳化硅表面的组合刻蚀工艺。

A combined etching process toward robust superhydrophobic SiC surfaces.

机构信息

School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive, Atlanta, GA 30332-0245, USA.

出版信息

Nanotechnology. 2012 Jun 29;23(25):255703. doi: 10.1088/0957-4484/23/25/255703. Epub 2012 May 31.

Abstract

Large-scale porous SiC was fabricated by a combination of Pt-assisted etching and reactive ion etching. It was found that the surface roughness of combined etchings increased dramatically in comparison with metal-assisted etching or reactive ion etching only. To reduce the surface energy, the porous SiC surface was functionalized with perfluorooctyl trichlorosilane, resulting in a superhydrophobic SiC surface with a contact angle of 169.2° and a hysteresis of 2.4°. The superhydrophobicity of the SiC surface showed a good long-term stability in an 85 °C/85% humidity chamber. Such superhydrophobicity was also stable in acidic or basic solutions, and the pH values showed little or no effect on the SiC surface status. In addition, enhancement of porosity-induced photoluminescence intensity was found in the superhydrophobic SiC samples. The robust superhydrophobic SiC surfaces may have a great potential for microfluid device, thermal ground plane, and biosensor applications.

摘要

采用 Pt 辅助刻蚀和反应离子刻蚀相结合的方法制备了大尺寸多孔碳化硅。研究发现,与仅采用金属辅助刻蚀或反应离子刻蚀相比,复合刻蚀后的表面粗糙度显著增加。为了降低表面能,对多孔碳化硅表面进行了全氟辛基三氯硅烷功能化处理,得到了具有 169.2°接触角和 2.4°滞后的超疏水碳化硅表面。在 85°C/85%相对湿度的腔室内,SiC 表面的超疏水性表现出良好的长期稳定性。这种超疏水性在酸性或碱性溶液中也很稳定,pH 值对 SiC 表面状态几乎没有影响。此外,在超疏水 SiC 样品中发现了由于多孔性诱导的光致发光强度增强。这种坚固的超疏水 SiC 表面在微流控器件、热接地平面和生物传感器应用方面具有很大的潜力。

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