钴掺杂氧化锌中的电阻开关和磁调制。
Resistive switching and magnetic modulation in cobalt-doped ZnO.
机构信息
Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
出版信息
Adv Mater. 2012 Jul 10;24(26):3515-20. doi: 10.1002/adma.201201595. Epub 2012 Jun 8.
PMID:22678882
Abstract
A combination of resistive switching and magnetic modulation gives rise to the integration of room temperature ferromagnetism (spin) and electrical properties (charge) into a simple Pt/Co:ZnO/Pt structure due to the formation of oxygen vacancy-based conductive filaments. This is promising for broadening the applications of random access memories to encode quaternary information.
摘要
基于氧空位形成的导电细丝，电阻开关和磁调制的组合使得室温铁磁性（自旋）和电学性能（电荷）集成到简单的 Pt/Co:ZnO/Pt 结构中成为可能。这有望拓宽随机存取存储器的应用，以编码四进制信息。
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