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高度稳定的氧化铟锡/锌钛氧化物/铂电阻式随机存取存储器及其在每单元两位存储中的应用。

Highly stable ITO/ZnTiO/Pt resistive random access memory and its application in two-bit-per-cell.

作者信息

Chen Shi-Xiang, Chang Sheng-Po, Hsieh Wei-Kang, Chang Shoou-Jinn, Lin Chih-Chien

机构信息

Institute of Microelectronics and Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University Tainan 70101 Taiwan

出版信息

RSC Adv. 2018 May 15;8(32):17622-17628. doi: 10.1039/c8ra03181a. eCollection 2018 May 14.

DOI:10.1039/c8ra03181a
PMID:35542070
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9080498/
Abstract

We discuss the fabrication procedure and device characteristics of ITO/ZnTiO/Pt resistive random-access memory (RRAM) at room temperature. Four different resistive states were obtained by applying different current compliances, all of which showed good retention characteristics with no obvious degradation and were individually distinguished after 10 000 s at a read voltage of 100 mV. The multilevel memory effect can be attributed to the combination of the radial growth of filaments and the formation of conductive filaments when applying different compliance current values during the set process. The set and reset voltages of the ITO/ZnTiO/Pt RRAM device were maintained within ±1 V. The device performed well at low operation voltages. The mechanisms of multilevel resistive switching characteristics were investigated to illustrate the multilevel carrier conduction phenomenon associated with ZnTiO-based RRAM devices. In this study, our group illustrated the application of zinc titanate (ZnTiO) in non-volatile memories for the first time.

摘要

我们讨论了室温下ITO/ZnTiO/Pt电阻式随机存取存储器（RRAM）的制备工艺和器件特性。通过施加不同的电流依从性获得了四种不同的电阻状态，所有这些状态都表现出良好的保持特性，没有明显的退化，并且在100 mV的读取电压下经过10000 s后可以分别区分。多级存储效应可归因于在设置过程中施加不同的依从电流值时，细丝的径向生长与导电细丝形成的结合。ITO/ZnTiO/Pt RRAM器件的设置和重置电压保持在±1 V以内。该器件在低工作电压下表现良好。研究了多级电阻开关特性的机制，以说明与基于ZnTiO的RRAM器件相关的多级载流子传导现象。在本研究中，我们团队首次展示了钛酸锌（ZnTiO）在非易失性存储器中的应用。

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本文引用的文献

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