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超洁净双层石墨烯中自发能隙态的证据。

Evidence for a spontaneous gapped state in ultraclean bilayer graphene.

机构信息

Department of Physics and Astronomy, University of California, 900 University Avenue, Riverside, CA 92521, USA.

出版信息

Proc Natl Acad Sci U S A. 2012 Jul 3;109(27):10802-5. doi: 10.1073/pnas.1205978109. Epub 2012 Jun 8.

Abstract

At the charge neutrality point, bilayer graphene (BLG) is strongly susceptible to electronic interactions and is expected to undergo a phase transition to a state with spontaneously broken symmetries. By systematically investigating a large number of single-and double-gated BLG devices, we observe a bimodal distribution of minimum conductivities at the charge neutrality point. Although σ(min) is often approximately 2-3 e(2)/h (where e is the electron charge and h is Planck's constant), it is several orders of magnitude smaller in BLG devices that have both high mobility and low extrinsic doping. The insulating state in the latter samples appears below a transition temperature T(c) of approximately 5 K and has a T = 0 energy gap of approximately 3 meV. Transitions between these different states can be tuned by adjusting disorder or carrier density.

摘要

在电荷中性点,双层石墨烯(BLG)对电子相互作用非常敏感,预计将经历一个具有自发破缺对称性的相转变。通过系统地研究大量单栅和双栅 BLG 器件,我们在电荷中性点观察到最小电导率的双峰分布。尽管 σ(min)通常约为 2-3e(2)/h(其中 e 是电子电荷,h 是普朗克常数),但在具有高迁移率和低外掺杂的 BLG 器件中,σ(min)要小几个数量级。在后一种样品中,绝缘态出现在约 5 K 的转变温度 T(c)以下,具有约 3 meV 的 T=0 能隙。通过调整无序或载流子密度,可以调节这些不同状态之间的转变。

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