Institut Néel, CNRS et Université Joseph Fourier, BP 166, F-38042 Grenoble, France.
Nano Lett. 2012 Jul 11;12(7):3501-6. doi: 10.1021/nl3010397. Epub 2012 Jun 19.
We present low-temperature electronic transport properties of superconducting nanowires obtained by nanolithography of 4-nm-thick niobium nitride (NbN) films epitaxially grown on sapphire substrate. Below 6 K, clear evidence of phase slippages is observed in the transport measurements. Upon lowering the temperature, we observe the signatures of a crossover between a thermal and a quantum behavior in the phase slip regimes. We find that phase slips are stable even at the lowest temperatures and that no hotspot is formed. The photoresponse of these nanowires is measured as a function of the light irradiation wavelength and temperature and exhibits a behavior comparable with previous results obtained on thicker films.
我们展示了通过在蓝宝石衬底上外延生长的 4nm 厚氮化铌（NbN）薄膜的纳米光刻获得的超导纳米线的低温电子输运性质。在 6K 以下，在输运测量中观察到了明显的相位滑移证据。随着温度的降低，我们观察到在相滑移区中热和量子行为之间的交叉的特征。我们发现，即使在最低温度下，相滑移也是稳定的，并且没有形成热点。这些纳米线的光响应作为光辐照波长和温度的函数进行测量，并表现出与先前在较厚薄膜上获得的结果相当的行为。
