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用于X射线光子探测的高纵横比超导氮化铌纳米线的制备。

Fabrication of superconducting niobium nitride nanowire with high aspect ratio for X-ray photon detection.

作者信息

Guo Shuya, Chen Qi, Pan Danfeng, Wu Yaojun, Tu Xuecou, He Guanglong, Han Hang, Li Feiyan, Jia Xiaoqing, Zhao Qingyuan, Zhang Hengbin, Bei Xiaomin, Xie Jun, Zhang Labao, Chen Jian, Kang Lin, Wu Peiheng

机构信息

Research Institute of Superconductor Electronics, Nanjing University, Hankou Road 22, Nanjing, 210093, China.

Qian Xuesen Laboratory of Space Technology, Beijing, 100094, China.

出版信息

Sci Rep. 2020 Jun 3;10(1):9057. doi: 10.1038/s41598-020-65901-5.

Abstract

The niobium nitride (NbN) nanowires fabricated with the high-quality ultra-thin NbN film with a thickness of 3 nm-6 nm were widely used for single photon detectors. These nanowires had a low aspect ratio, less than 1:20. However, increasing the thickness and the aspect ratio of highly-uniformed NbN nanowires without reducing the superconductivity is crucial for the device in detecting high-energy photons. In this paper, a high-quality superconducting nanowire with aspect ratio of 1:1 was fabricated with optimized process, which produced a superconducting critical current of 550 μA and a hysteresis of 36 μA at 2.2 K. With the optimization of the electron beam lithography process of AR-P6200.13 and the adjustion of the chamber pressure, the discharge power, as well as the auxiliary gas in the process of reactive ion etching (RIE), the meandered NbN nanowire structure with the minimum width of 80 nm, the duty cycle of 1:1 and the depth of 100 nm were finally obtained on the silicon nitride substrate. Simultaneously, the sidewall of nanowire was vertical and smooth, and the corresponding depth-width ratio was more than 1:1. The fabricated NbN nanowire will be applied to the detection of soft X-ray photon emitted from pulsars with a sub-10 ps time resolution.

摘要

用厚度为3纳米至6纳米的高质量超薄氮化铌(NbN)薄膜制备的氮化铌纳米线被广泛用于单光子探测器。这些纳米线的纵横比很低,小于1:20。然而,在不降低超导性的情况下增加高度均匀的氮化铌纳米线的厚度和纵横比对于该器件检测高能光子至关重要。在本文中,通过优化工艺制备了纵横比为1:1的高质量超导纳米线,在2.2 K时其超导临界电流为550 μA,磁滞为36 μA。通过优化AR-P6200.13的电子束光刻工艺以及调整反应离子蚀刻(RIE)过程中的腔室压力、放电功率和辅助气体,最终在氮化硅衬底上获得了最小宽度为80 nm、占空比为1:1且深度为100 nm的曲折氮化铌纳米线结构。同时,纳米线的侧壁垂直且光滑,相应的深宽比大于1:1。所制备的氮化铌纳米线将应用于对脉冲星发射的软X射线光子进行检测,时间分辨率低于10皮秒。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/a616/7271163/4b94401fed7a/41598_2020_65901_Fig1_HTML.jpg

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