Graduate School of Engineering, Toyohashi University of Technology , Toyohashi, Aichi 441-8580, Japan.
ACS Appl Mater Interfaces. 2012 Jul 25;4(7):3558-65. doi: 10.1021/am3006093. Epub 2012 Jun 28.
We report on a hybrid diode composed of a 2.1 eV bandgap p-cupric oxide (Cu2O) semiconductor and fullerene (C60) layer with a face-centered cubic configuration. The hybrid diode has been constructed by electrodeposition of the 500 nm thick Cu2O layer in a basic aqueous solution containing a copper acetate hydrate and lactic acid followed by a vacuum evaporation of the 50 nm thick C60 layer at the evaporation rate from 0.25 to 1.0 Å/s. The C60 layers prepared by the evaporation possessed a face-centered cubic configuration with the lattice constant of 14.19 A, and the preferred orientation changed from random to (111) plane with decrease in the C60 evaporation rate from 1.0 to 0.25 Å/s. The hybrid p-Cu2O/C60 diode showed a rectification feature regardless of the C60 evaporation rate, and both the rectification ratio and forward current density improved with decrease in the C60 evaporation rate. The excellent rectification with the ideality factor of approximately 1 was obtained for the 500 nm thick (111)-Cu2O/50 nm thick (111)-fcc-C60/bathocuproine (BCP) diode at the C60 evaporation rate of 0.25 Å /s. The hybrid Cu2O/C60 diode prepared by stacking the C60 layer at the evaporation rate of 0.25 Å/s revealed the photovoltaic performance of 8.7 × 10(-6)% in conversion efficiency under AM1.5 illumination, and the conversion efficiency changed depending on the C60 evaporation rate.
我们报告了一种由 2.1eV 带隙 p-氧化亚铜 (Cu2O) 半导体和富勒烯 (C60) 层组成的混合二极管，其具有面心立方结构。该混合二极管是通过在含有乙酸铜水合物和乳酸的碱性水溶液中电沉积 500nm 厚的 Cu2O 层，然后在蒸发速率为 0.25 至 1.0Å/s 下蒸发 50nm 厚的 C60 层来构建的。通过蒸发制备的 C60 层具有面心立方结构，晶格常数为 14.19Å，随着 C60 蒸发速率从 1.0 降至 0.25Å/s，择优取向从随机变为 (111) 平面。无论 C60 的蒸发速率如何，p-Cu2O/C60 混合二极管均表现出整流特性，并且整流比和正向电流密度都随着 C60 蒸发速率的降低而提高。在 C60 蒸发速率为 0.25Å/s 时，500nm 厚的 (111)-Cu2O/50nm 厚的 (111)-fcc-C60/ bathocuproine (BCP) 二极管获得了约 1 的理想因子的优异整流特性。在蒸发速率为 0.25Å/s 时堆叠 C60 层制备的混合 Cu2O/C60 二极管在 AM1.5 光照下表现出 8.7×10(-6)%的光伏转换效率，转换效率取决于 C60 的蒸发速率。
