Electrical and Computer Engineering, University of Houston, Houston, TX 77584, USA.
Nanotechnology. 2012 Jul 11;23(27):275705. doi: 10.1088/0957-4484/23/27/275705. Epub 2012 Jun 19.
A bit patterned magnetic array based on Co/Pd magnetic multilayers with a binary perpendicular magnetic anisotropy distribution was fabricated. The binary anisotropy distribution was attained through angled helium ion irradiation of a bit edge using hydrogen silsesquioxane (HSQ) resist as an ion stopping layer to protect the rest of the bit. The viability of this technique was explored numerically and evaluated through magnetic measurements of the prepared bit patterned magnetic array. The resulting graded bit patterned magnetic array showed a 35% reduction in coercivity and a 9% narrowing of the standard deviation of the switching field.
我们制备了一种基于 Co/Pd 磁性多层膜的具有双极性垂直各向异性分布的位相图形化磁性阵列。通过使用氢化硅倍半氧烷 (HSQ) 作为离子阻挡层对角形氦离子辐照位相边缘，实现了双极性各向异性分布，以保护位相的其余部分。通过对制备的位相图形化磁性阵列进行磁性测量，从数值和实验两方面对该技术的可行性进行了研究。所得的梯度位相图形化磁性阵列的矫顽力降低了 35%，开关场的标准偏差缩小了 9%。
