Xu Xuejun, Tsuboi Toshiki, Chiba Taichi, Usami Noritaka, Maruizumi Takuya, Shiraki Yasuhiro
Research Center for Silicon Nano-Science, Advanced Research Laboratories, Tokyo City University, 8-15-1 Todoroki, Tokyo 158-0082, Japan.
Opt Express. 2012 Jun 18;20(13):14714-21. doi: 10.1364/OE.20.014714.
Room temperature light emission from Ge self-assembled quantum dots (QDs) embedded in L3-type photonic crystal (PhC) nanocavity is successfully demonstrated under current injection through a lateral PIN diode structure. The Ge QDs are grown on silicon-on-insulator (SOI) wafer by solid-source molecular beam epitaxy (SS-MBE), and the PIN diode is fabricated by selective ion implantation around the PhC cavity. Under an injected current larger than 0.5 mA, strong resonant electroluminescence (EL) around 1.3-1.5 μm wavelength corresponding to the PhC cavity modes is observed. A sharp peak with a quality factor up to 260 is obtained in the EL spectrum. These results show a possible way to realize practical silicon-based light emitting devices.
通过横向PIN二极管结构进行电流注入时，成功证明了嵌入L3型光子晶体（PhC）纳米腔中的锗自组装量子点（QD）在室温下的发光。锗量子点通过固源分子束外延（SS-MBE）生长在绝缘体上硅（SOI）晶圆上，并且通过在光子晶体腔周围进行选择性离子注入来制造PIN二极管。在大于0.5 mA的注入电流下，观察到对应于光子晶体腔模式的波长在1.3 - 1.5μm附近的强共振电致发光（EL）。在电致发光光谱中获得了品质因数高达260的尖锐峰值。这些结果展示了实现实用的硅基发光器件的一种可能途径。
