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Note: cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors.

作者信息

Beev Nikolai, Kiviranta Mikko

机构信息

VTT, Tietotie 3, 02150 Espoo, Finland.

出版信息

Rev Sci Instrum. 2012 Jun;83(6):066107. doi: 10.1063/1.4729665.

DOI:10.1063/1.4729665
PMID:22755673
Abstract

Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.

摘要

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