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用于核磁共振应用的低温差分放大器。

Cryogenic Differential Amplifier for NMR Applications.

作者信息

Zavjalov V V, Savin A M, Hakonen P J

机构信息

Low Temperature Laboratory, Department of Applied Physics, Aalto University, PO Box 15100, 00076 Aalto, Finland.

出版信息

J Low Temp Phys. 2019;195(1):72-80. doi: 10.1007/s10909-018-02130-1. Epub 2018 Dec 17.

DOI:10.1007/s10909-018-02130-1
PMID:31073248
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC6474854/
Abstract

We have designed and characterized a cryogenic amplifier for use in He NMR spectrometry. The amplifier, with a power consumption of  mW, works at temperatures down to 4 K. It has a high-impedance input for measuring a signal from NMR resonant circuit, and a 50  differential input which can be used for pick-up compensation and gain calibration. At 4.2 K, the amplifier has a voltage gain of 45, output resistance 146  and a 4.4 MHz bandwidth starting from DC. At 1 MHz, the voltage and current noise amount to 1.3  and 12  , respectively, which yields an optimal source impedance of  k .

摘要

我们设计并表征了一种用于氦核磁共振光谱仪的低温放大器。该放大器功耗为 毫瓦,可在低至4K的温度下工作。它具有用于测量来自核磁共振谐振电路信号的高阻抗输入,以及一个50 差分输入,可用于拾取补偿和增益校准。在4.2K时,该放大器的电压增益为45,输出电阻为146 ,从直流开始的带宽为4.4MHz。在1MHz时,电压噪声和电流噪声分别为1.3 和12 ,这产生了 千欧的最佳源阻抗。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36f0/6474854/951c1a5c636a/10909_2018_2130_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36f0/6474854/3db2f1141765/10909_2018_2130_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36f0/6474854/a445ad1fd926/10909_2018_2130_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36f0/6474854/6918dbf7a029/10909_2018_2130_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36f0/6474854/951c1a5c636a/10909_2018_2130_Fig4_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36f0/6474854/3db2f1141765/10909_2018_2130_Fig1_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36f0/6474854/a445ad1fd926/10909_2018_2130_Fig2_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36f0/6474854/6918dbf7a029/10909_2018_2130_Fig3_HTML.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/36f0/6474854/951c1a5c636a/10909_2018_2130_Fig4_HTML.jpg

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本文引用的文献

1
Note: cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors.
Rev Sci Instrum. 2012 Jun;83(6):066107. doi: 10.1063/1.4729665.