Novikov Ilya L, Ivanov Boris I, Ponomarev Dmitri V, Vostretsov Aleksey G
Novosibirsk State Technical University, K.Marx-Av.20, Novosibirsk 630073, Russia.
Beilstein J Nanotechnol. 2020 Sep 2;11:1316-1320. doi: 10.3762/bjnano.11.115. eCollection 2020.
We designed, implemented, and characterized differential amplifiers for cryogenic temperatures based on Si bipolar junction transistor technology. The amplifiers show high gain values of more than 60 dB at 300, 77, and 48 K. The minimum voltage noise spectral density was achieved at 77 K and corresponded to 0.33 nV/Hz with a flicker noise of 20 Hz. The maximum voltage gain was 70 dB at 77 K for a frequency range from DC to 17 kHz. We experimentally show that the parallel differential circuit design allows for a reduction of the voltage noise from 0.55 to 0.33 nV/Hz at 77 K.
我们基于硅双极结型晶体管技术设计、实现并表征了用于低温环境的差分放大器。这些放大器在300 K、77 K和48 K时展现出超过60 dB的高增益值。最小电压噪声谱密度在77 K时实现，对应于0.33 nV/Hz，闪烁噪声为20 Hz。在77 K时，对于从直流到17 kHz的频率范围，最大电压增益为70 dB。我们通过实验表明，并联差分电路设计可使77 K时的电压噪声从0.55 nV/Hz降至0.33 nV/Hz。
