Max Planck Institute for Intelligent Systems, Department of New Materials and Biosystems, Heisenbergstrasse 3, Stuttgart, 70569, Germany.
Nanoscale Res Lett. 2012 Aug 9;7(1):450. doi: 10.1186/1556-276X-7-450.
A simple method for the fabrication of porous silicon (Si) by metal-assisted etching was developed using gold nanoparticles as catalytic sites. The etching masks were prepared by spin-coating of colloidal gold nanoparticles onto Si. An appropriate functionalization of the gold nanoparticle surface prior to the deposition step enabled the formation of quasi-hexagonally ordered arrays by self-assembly which were translated into an array of pores by subsequent etching in HF solution containing H2O2. The quality of the pattern transfer depended on the chosen preparation conditions for the gold nanoparticle etching mask. The influence of the Si surface properties was investigated by using either hydrophilic or hydrophobic Si substrates resulting from piranha solution or HF treatment, respectively. The polymer-coated gold nanoparticles had to be thermally treated in order to provide a direct contact at the metal/Si interface which is required for the following metal-assisted etching. Plasma treatment as well as flame annealing was successfully applied. The best results were obtained for Si substrates which were flame annealed in order to remove the polymer matrix - independent of the substrate surface properties prior to spin-coating (hydrophilic or hydrophobic). The presented method opens up new resources for the fabrication of porous silicon by metal-assisted etching. Here, a vast variety of metal nanoparticles accessible by well-established wet-chemical synthesis can be employed for the fabrication of the etching masks.
一种通过金属辅助刻蚀制备多孔硅(Si)的简单方法,使用金纳米粒子作为催化位点。通过将胶体金纳米粒子旋涂到 Si 上来制备刻蚀掩模。在沉积步骤之前对金纳米粒子表面进行适当的功能化,使得通过自组装形成准六边形有序排列,然后通过在含有 H2O2 的 HF 溶液中进行后续刻蚀,将其转化为多孔阵列。图案转移的质量取决于所选的金纳米粒子刻蚀掩模的制备条件。通过使用分别来自过硫酸氢钾溶液或 HF 处理的亲水或疏水 Si 基底来研究 Si 表面性质的影响。为了在金属/Si 界面提供直接接触,需要对涂覆聚合物的金纳米粒子进行热处理,这是后续金属辅助刻蚀所必需的。等离子体处理和火焰退火都成功地应用了。对于通过火焰退火来去除聚合物基质的 Si 基底,得到了最佳的结果 - 与旋涂前的基底表面性质(亲水或疏水)无关。所提出的方法为通过金属辅助刻蚀制备多孔硅开辟了新的资源。在这里,可以使用通过成熟的湿化学合成获得的各种金属纳米粒子来制造刻蚀掩模。