Gao Shuang, Zeng Fei, Wang Minjuan, Wang Guangyue, Song Cheng, Pan Feng
Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
Sci Rep. 2015 Oct 21;5:15467. doi: 10.1038/srep15467.
The unique complementary switching behaviour of complementary resistive switches (CRSs) makes them very attractive for logic applications. The implementation of complete Boolean logic functions in a single CRS cell is certainly an extremely important step towards the commercialisation of related logic circuits, but it has not been accomplished to date. Here, we report two methods for the implementation of complete Boolean logic functions in a single CRS cell. The first method is based on the intrinsic switchable diode of a peculiar CRS cell that is composed of two anti-serial bipolar resistive switches with a rectifying high resistance state, while the second method is based directly on the complementary switching behaviour itself of any single CRS cell. The feasibilities of both methods have been theoretically predicted and then experimentally demonstrated on the basis of a Ta/Ta2O5/Pt/Ta2O5/Ta CRS cell. Therefore, these two methods-in particular the complementary switching behaviour itself-based method, which has natural immunity to the sneak-path issue of crossbar logic circuits-are believed to be capable of significantly advancing both our understanding and commercialization of related logic circuits. Moreover, peculiar CRS cells have been demonstrated to be feasible for tri-level storage, which can serve as an alternative method of realising ultra-high-density data storage.
互补电阻开关(CRS)独特的互补切换行为使其在逻辑应用中极具吸引力。在单个CRS单元中实现完整的布尔逻辑功能无疑是相关逻辑电路商业化进程中极为重要的一步,但迄今为止尚未实现。在此,我们报告了在单个CRS单元中实现完整布尔逻辑功能的两种方法。第一种方法基于一种特殊CRS单元的固有可切换二极管,该单元由两个具有整流高阻态的反串联双极电阻开关组成,而第二种方法直接基于任何单个CRS单元本身的互补切换行为。这两种方法的可行性均已在理论上得到预测,随后基于Ta/Ta2O5/Pt/Ta2O5/Ta CRS单元进行了实验验证。因此,这两种方法——特别是基于互补切换行为本身的方法,该方法对交叉点逻辑电路的潜通路问题具有天然免疫力——被认为能够显著推动我们对相关逻辑电路的理解以及商业化进程。此外,已证明特殊的CRS单元适用于三电平存储,这可作为实现超高密度数据存储的一种替代方法。