Department of Chemistry, Wayne State University, 5101 Cass Ave, Detroit, MI 48202, USA.
Chem Commun (Camb). 2012 Sep 4;48(68):8523-5. doi: 10.1039/c2cc34188c. Epub 2012 Jul 17.
A method of fabricating sol-gel quantum dot (QD) films is demonstrated, and their optical, structural and electrical properties are evaluated. The CdSe(ZnS) xerogel films remain quantum confined, yet are highly conductive (10(-3) S cm(-1)). This approach provides a pathway for the exploitation of QD gels in optoelectronic applications.
一种溶胶-凝胶量子点(QD)薄膜的制备方法得到了验证,并对其光学、结构和电学性能进行了评估。CdSe(ZnS) xerogel 薄膜保持量子限制,但具有高导电性(10(-3) S cm(-1))。该方法为在光电应用中利用 QD 凝胶提供了途径。