, Instituto de Desarrollo Tecnológico para la Industria Química, UNL/CONICET, Güemes 3450, Santa Fe, S3000GLN, Argentina.
Nanoscale Res Lett. 2012 Jul 25;7(1):419. doi: 10.1186/1556-276X-7-419.
We study the electrical characteristics of macroporous silicon/transparent conductor oxide junctions obtained by the deposition of fluorine doped-SnO2 onto macroporous silicon thin films using the spray pyrolysis technique. Macroporous silicon was prepared by the electrochemical anodization of a silicon wafer to produce pore sizes ranging between 0.9 to 1.2 μm in diameter. Scanning electronic microscopy was performed to confirm the pore filling and surface coverage. The transport of charge carriers through the interface was studied by measuring the current-voltage curves in the dark and under illumination. In the best configuration, we obtain a modest open-circuit voltage of about 70 mV and a short-circuit current of 3.5 mA/cm2 at an illumination of 110 mW/cm2. In order to analyze the effects of the illumination on the electrical properties of the junction, we proposed a model of two opposing diodes, each one associated with an independent current source. We obtain a good accordance between the experimental data and the model. The current-voltage curves in illuminated conditions are well fitted with the same parameters obtained in the dark where only the photocurrent intensities in the diodes are free parameters.
我们研究了通过喷雾热解技术将掺氟的 SnO2 沉积到多孔硅薄膜上来制备的大孔硅/透明导体氧化物结的电特性。多孔硅是通过硅片的电化学阳极氧化制备的，产生的孔径在 0.9 到 1.2 微米之间。扫描电子显微镜用于确认孔的填充和表面覆盖。通过在黑暗中和光照下测量电流-电压曲线来研究电荷载流子通过界面的输运。在最佳配置中，我们在 110 mW/cm2 的光照下获得了约 70 mV 的适度开路电压和约 3.5 mA/cm2 的短路电流。为了分析光照对结的电特性的影响，我们提出了一个由两个相反二极管组成的模型，每个二极管都与一个独立的电流源相关联。我们获得了实验数据和模型之间的良好一致性。在光照条件下的电流-电压曲线与在黑暗中获得的曲线拟合良好，其中只有二极管中的光电流强度是自由参数。
