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纳米支架铁电薄膜具有极高的可调谐性和低损耗。

Extremely high tunability and low loss in nanoscaffold ferroelectric films.

机构信息

Department of Materials Science, University of Cambridge, Pembroke Street, Cambridge CB2 3QZ, United Kingdom.

出版信息

Nano Lett. 2012 Aug 8;12(8):4311-7. doi: 10.1021/nl302032u. Epub 2012 Jul 27.

Abstract

There are numerous radio frequency and microwave device applications which require materials with high electrical tunability and low dielectric loss. For phased array antenna applications there is also a need for materials which can operate above room temperature and which have a low temperature coefficient of capacitance. We have created a nanoscaffold composite ferroelectric material containing Ba(0.6)Sr(0.4)TiO(3) and Sm(2)O(3) which has a very high tunability which scales inversely with loss. This behavior is opposite to what has been demonstrated in any previous report. Furthermore, the materials operate from room temperature to above 150 °C, while maintaining high tunability and low temperature coefficient of tunability. This new paradigm in dielectric property control comes about because of a vertical strain control mechanism which leads to high tetragonality (c/a ratio of 1.0126) in the BSTO. Tunability values of 75% (200 kV/cm field) were achieved at room temperature in micrometer thick films, the value remaining to >50% at 160 °C. Low dielectric loss values of <0.01 were also achieved, significantly lower than reference pure films.

摘要

有许多射频和微波设备应用需要具有高电可调谐性和低介电损耗的材料。对于相控阵天线应用,还需要能够在室温以上工作且具有低电容温度系数的材料。我们已经开发出一种包含 Ba(0.6)Sr(0.4)TiO(3) 和 Sm(2)O(3)的纳米支架复合铁电材料,其可调谐性非常高,与损耗成反比。这种行为与之前任何报告中所展示的都相反。此外,这些材料在从室温到 150°C 的温度范围内工作,同时保持高的可调谐性和低的可调谐温度系数。这种介电性能控制的新范例是由于垂直应变控制机制导致 BSTO 具有高的四方性(c/a 比为 1.0126)。在微米厚的薄膜中,室温下实现了 75%(200 kV/cm 电场)的可调谐性,在 160°C 时仍保持>50%。还实现了低于 0.01 的低介电损耗值,明显低于参考纯薄膜。

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