Nguyen Minh D, Tran Doan T, Dang Ha T, Nguyen Chi T Q, Rijnders Guus, Vu Hung N
MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands.
International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi 100000, Vietnam.
Materials (Basel). 2021 Oct 27;14(21):6448. doi: 10.3390/ma14216448.
The dielectric properties, tunability and figure-of-merit () of relaxor PbLa(ZrTi)O (PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and are enhanced as the film thickness increases, which are mainly attributed to the presence of an interfacial layer near the film-electrode interface. Experimental results illustrated that a slight reduction is observed in both dielectric constant and tunability (-2%) in a wide-frequency range (10 kHz-1 MHz); meanwhile, the value decreases significantly (-17%) with increasing frequency, arising from the higher dielectric loss value. The 1000-nm PLZT film shows the largest tunability of 94.6% at a maximum electric-field of 1450 kV/cm, while the highest factor is 37.6 at 1000 kV/cm, due to the combination of medium tunability (88.7%) and low dielectric loss (0.0236). All these excellent results indicated that the relaxor PLZT films are promising candidates for specific applications in microwave devices.
对弛豫铁电体PbLa(ZrTi)O(PLZT)薄膜的介电性能、可调性和品质因数()进行了研究。介电测量表明,随着薄膜厚度的增加,介电常数(零偏置场下)、可调性和均有所提高,这主要归因于薄膜-电极界面附近存在界面层。实验结果表明,在宽频率范围(10 kHz - 1 MHz)内,介电常数和可调性均略有降低(-2%);同时,由于较高的介电损耗值,品质因数随频率显著降低(-17%)。1000 nm的PLZT薄膜在最大电场为1450 kV/cm时显示出最大可调性94.6%,而在1000 kV/cm时最高品质因数为37.6,这归因于中等可调性(88.7%)和低介电损耗(0.0236)的结合。所有这些优异结果表明,弛豫铁电体PLZT薄膜是微波器件特定应用的有前途的候选材料。