Li Ruitao, Xu Diming, Du Chao, Ma Qianqian, Zhang Feng, Liang Xu, Wang Dawei, Shi Zhongqi, Liu Wenfeng, Zhou Di
Electronic Materials Research Laboratory & Multifunctional Materials and Structures, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China.
State Key Laboratory for Strength and Vibration of Mechanical Structures, Xi'an Jiaotong University, Xi'an, 710049, China.
Nat Commun. 2024 May 4;15(1):3754. doi: 10.1038/s41467-024-48264-7.
Due to their responsiveness to modulation by external direct current fields, dielectric tunable materials are extensively utilized in integrated components, such as ferroelectric phase shifters. Barium strontium titanate ceramics have been considered the most potential tunable materials for a long time. However, the significant dielectric loss and high voltage drive have limited their further applications. Recently, BiTiWO ceramic has regained attention for its high dielectric tunability with low loss. In this study, we judiciously introduce Nb with a larger ionic radius, replacing Ti and W. This successful substitution enables the modulation of the phase transition temperature of BiTiWO ceramics to room temperature, resulting in superior tunable properties. Specifically, the 0.7BiTiWO-0.3BiTiNbO ceramics exhibit giant tunability (~75.6%) with ultralow loss (<0.002) under a low electric field (1.5 kV/mm). This tunability is twice that of barium strontium titanate ceramics with a similar dielectric constant and only one-tenth of the loss. Neutron powder diffraction and transmission-electron-microscopy illustrate the nanodomains and micro-strains influenced by ion substitution. Density functional theory simulation calculations reveal the contribution of ion substitution to polarization. The research provides an ideal substitute for tunable material and a general strategy for adjusting phase transition temperature to improve dielectric properties.
由于介电可调材料对外部直流电场调制的响应性,它们被广泛应用于集成组件中,如铁电移相器。长期以来,钛酸锶钡陶瓷一直被认为是最具潜力的可调材料。然而,显著的介电损耗和高电压驱动限制了它们的进一步应用。最近,BiTiWO陶瓷因其低损耗的高介电可调性而重新受到关注。在本研究中,我们明智地引入了离子半径较大的Nb,取代Ti和W。这种成功的取代使得BiTiWO陶瓷的相变温度能够调制到室温,从而产生优异的可调性能。具体而言,0.7BiTiWO-0.3BiTiNbO陶瓷在低电场(1.5 kV/mm)下表现出巨大的可调性(约75.6%)和超低损耗(<0.002)。这种可调性是具有相似介电常数的钛酸锶钡陶瓷的两倍,而损耗仅为其十分之一。中子粉末衍射和透射电子显微镜揭示了受离子取代影响的纳米畴和微应变。密度泛函理论模拟计算揭示了离子取代对极化的贡献。该研究为可调材料提供了理想的替代品,并为调整相变温度以改善介电性能提供了通用策略。