Física i Cristallografia de Materials i Nanomaterials-FiCMA-FiCNA, Universitat Rovira i Virgili, Campus Sescelades, c/Marcel·lí Domingo s/n, 43007 Tarragona, Spain.
Microsc Microanal. 2012 Aug;18(4):905-11. doi: 10.1017/S1431927612001134. Epub 2012 Jul 26.
We present a technique for the direct deposition of nanoporous GaN particles on Si substrates without requiring any post-growth treatment. The internal morphology of the nanoporous GaN particles deposited on Si substrates by using a simple chemical vapor deposition approach was investigated, and straight nanopores with diameters ranging between 50 and 100 nm were observed. Cathodoluminescence characterization revealed a sharp and well-defined near band-edge emission at ∼365 nm. This approach simplifies other methods used for this purpose, such as etching and corrosion techniques that can damage the semiconductor structure and modify its properties.
我们提出了一种无需任何后生长处理即可将纳米多孔 GaN 颗粒直接沉积在 Si 衬底上的技术。通过使用简单的化学气相沉积方法，研究了沉积在 Si 衬底上的纳米多孔 GaN 颗粒的内部形态，观察到直径在 50 至 100nm 之间的直纳米孔。阴极发光特性表明，在 ∼365nm 处存在尖锐且定义明确的近带边发射。这种方法简化了其他用于此目的的方法，例如可以损坏半导体结构并改变其性质的蚀刻和腐蚀技术。
