Park Mi Sun, Sung Shi-Joon, Kim Dae-Hwan, Kang Jin-Kyu
Green Energy Research Division, Daegu Gyeongbuk Institute of Science and Technology, Daegu 711-873, Korea.
J Nanosci Nanotechnol. 2012 Apr;12(4):3488-91. doi: 10.1166/jnn.2012.5579.
Copper indium gallium diselenide (CIGSe) thin film was fabricated via a thermal treatment of GIG-Se bi-layer thin films. A CIG layer was prepared first, by a chemical solution deposition (CSD) process. The Se layer was deposited separately on the CIG layer by evaporation. The GIG-Se bi-layer then underwent a thermal treatment to cause a reaction between the two layers. In order to investigate the mechanism of CIG-Se bi-layer crystallization, the thermal treatment temperature was varied. The properties of the prepared CIGSe2 thin films were analyzed using X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectrometry (EDS), and UV-visible spectrophotometry.
通过对GIG-Se双层薄膜进行热处理制备了铜铟镓硒（CIGSe）薄膜。首先通过化学溶液沉积（CSD）工艺制备CIG层。通过蒸发将硒层单独沉积在CIG层上。然后对GIG-Se双层进行热处理，使两层之间发生反应。为了研究CIG-Se双层结晶的机理，改变了热处理温度。使用X射线衍射（XRD）、扫描电子显微镜（SEM）、能量色散光谱（EDS）和紫外可见分光光度法对制备的CIGSe2薄膜的性能进行了分析。
