Anadolu University, Faculty of Science, Department of Physics, 26470 Eskisehir, Turkey.
Spectrochim Acta A Mol Biomol Spectrosc. 2012 Oct;96:882-8. doi: 10.1016/j.saa.2012.07.108. Epub 2012 Aug 4.
Using indium chloride as an In source, In-doped SnO(2) films were fabricated by sol-gel method through dip-coating on borofloat glass substrates. The undoped SnO(2) films were deposited in air between 400 and 600 °C to get optimum deposition temperature in terms of crystal quality and hence In-doped SnO(2) films were deposited in air at 600 °C. The effect of both deposition temperature and In content on structural, morphological, optical and electrical properties was investigated. The crystalline structure and orientation of the films were investigated by X-ray diffraction (XRD) and surface morphology was studied by a field emission scanning electron microscope (FESEM). The compositional analysis of the films was confirmed by energy dispersive X-ray spectrometer (EDS). The absorption band edge of the SnO(2) films shifted from 3.88 to 3.66 eV with In content. The van der Pauw method was used to measure the sheet resistance of the films. The sheet resistance was affected significantly by deposition temperature and In content.
使用氯化铟作为铟源，通过浸渍法在硼硅酸盐玻璃基板上采用溶胶-凝胶法制备了掺铟氧化锡（In-doped SnO(2)）薄膜。在空气中沉积未掺杂的 SnO(2)薄膜，沉积温度范围为 400-600°C，以获得最佳的晶体质量沉积温度，因此在 600°C 的空气中沉积掺铟氧化锡（In-doped SnO(2)）薄膜。研究了沉积温度和铟含量对结构、形貌、光学和电学性能的影响。通过 X 射线衍射（XRD）研究了薄膜的晶体结构和取向，用场发射扫描电子显微镜（FESEM）研究了表面形貌。通过能谱仪（EDS）确认了薄膜的组成分析。SnO(2)薄膜的吸收带边从 3.88 eV 移动到 3.66 eV，随着铟含量的增加。采用范德堡法测量了薄膜的方阻。方阻受沉积温度和铟含量的显著影响。
