Park Mi Sun, Sung Shi-Joon, Kim Dae-Hwan
J Nanosci Nanotechnol. 2015 Mar;15(3):2490-4. doi: 10.1166/jnn.2015.10269.
CuIn(x)Ga1-xSe2 (CIGS) thin films were prepared by a solution-based CuInGa (CIG) precursor- selenization process. First, we investigated the effect of selenization temperature on the formation of polycrystalline CIGS and grain growth. The CIG precursor films were selenized using a two-step process to investigate the reaction of Se and CIG precursors during the formation of CIGS thin films. Depending on the temperature in the 1st step of the selenization process, the CIG precursor forms a different intermediate phase between the single phase to ternary phase such as Cu, Se, CuSe, InSe, and CuInSe2. In addition, the intermediate phase exerts a significant influence on the final phase obtained after the 2nd step of the selenization process, particularly with regard to characteristics such as polycrystalline structure and grain growth in the CIGS films. The photoelectron conversion efficiency of devices prepared using CIGS thin films was approximately 1.59-2.75%.
通过基于溶液的铜铟镓（CIG）前驱体硒化工艺制备了铜铟镓硒（CuIn(x)Ga1-xSe2，CIGS）薄膜。首先，我们研究了硒化温度对多晶CIGS形成和晶粒生长的影响。使用两步工艺对CIG前驱体薄膜进行硒化，以研究在CIGS薄膜形成过程中硒与CIG前驱体的反应。根据硒化工艺第一步中的温度，CIG前驱体在单相到三元相之间形成不同的中间相，如Cu、Se、CuSe、InSe和CuInSe2。此外，中间相对硒化工艺第二步后获得的最终相有重大影响，特别是在CIGS薄膜的多晶结构和晶粒生长等特性方面。使用CIGS薄膜制备的器件的光电子转换效率约为1.59 - 2.75%。
