Zhang Yaozhong, Zhang Liying, Zhao Jiang, Wang Liang, Zhao Gang, Zhang Yafei
Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, Institute of Micro/Nano Science and Technology, Shanghai Jiao Tong University, Shanghai, 200030, People's Republic of China.
Nanoscale Res Lett. 2012 Aug 8;7(1):441. doi: 10.1186/1556-276X-7-441.
Doping an impure element with a larger atomic volume into crystalline structure of buck crystals is normally blocked because the rigid crystalline structure could not tolerate a larger distortion. However, this difficulty may be weakened for nanocrystalline structures. Diamonds, as well as many semiconductors, have a difficulty in effective doping. Theoretical calculations carried out by DFT indicate that vanadium (V) is a dopant element for the n-type diamond semiconductor, and their several donor state levels are distributed between the conduction band and middle bandgap position in the V-doped band structure of diamond. Experimental investigation of doping vanadium into nanocrystalline diamond films (NDFs) was first attempted by hot filament chemical vapor deposition technique. Acetone/H2 gas mixtures and vanadium oxytripropoxide (VO(OCH2CH2CH3)3) solutions of acetone with V and C elemental ratios of 1:5,000, 1:2,000, and 1:1,000 were used as carbon and vanadium sources, respectively. The resistivity of the V-doped NDFs decreased two orders with the increasing V/C ratios.
将具有较大原子体积的杂质元素掺入巴克晶体的晶体结构中通常会受到阻碍，因为刚性晶体结构无法承受较大的畸变。然而，对于纳米晶体结构，这种困难可能会减弱。金刚石以及许多半导体在有效掺杂方面都存在困难。由密度泛函理论（DFT）进行的理论计算表明，钒（V）是n型金刚石半导体的掺杂元素，并且在金刚石的V掺杂能带结构中，其几个施主能级分布在导带和中间带隙位置之间。首次尝试通过热丝化学气相沉积技术对纳米晶金刚石薄膜（NDFs）进行钒掺杂的实验研究。分别使用丙酮/H₂气体混合物以及V和C元素比为1:5000、1:2000和1:1000的丙酮三丙氧基钒（VO(OCH₂CH₂CH₃)₃）溶液作为碳源和钒源。随着V/C比的增加，V掺杂NDFs的电阻率降低了两个数量级。
