室温下 HF/H2O2/AgNO3 体系中 MACE 法制备多孔硅纳米线。
Fabrication of porous silicon nanowires by MACE method in HF/H2O2/AgNO3 system at room temperature.
机构信息
State Key Laboratory of Complex Nonferrous Metal Resources Clear Utilization/Silicon Metallurgy and Silicon Material Engineering Research Center of Universities in Yunnan Province, Kunming 650093, China ; Faculty of Metallurgical and Energy Engineering, Kunming University of Science and Technology, Kunming 650093, China.
Faculty of Physical Science and Technology, Yunnan University, Kunming 650091, China.
出版信息
Nanoscale Res Lett. 2014 Apr 30;9(1):196. doi: 10.1186/1556-276X-9-196. eCollection 2014.
In this paper, the moderately and lightly doped porous silicon nanowires (PSiNWs) were fabricated by the 'one-pot procedure' metal-assisted chemical etching (MACE) method in the HF/H2O2/AgNO3 system at room temperature. The effects of H2O2 concentration on the nanostructure of silicon nanowires (SiNWs) were investigated. The experimental results indicate that porous structure can be introduced by the addition of H2O2 and the pore structure could be controlled by adjusting the concentration of H2O2. The H2O2 species replaces Ag(+) as the oxidant and the Ag nanoparticles work as catalyst during the etching. And the concentration of H2O2 influences the nucleation and motility of Ag particles, which leads to formation of different porous structure within the nanowires. A mechanism based on the lateral etching which is catalyzed by Ag particles under the motivation by H2O2 reduction is proposed to explain the PSiNWs formation.
本文采用室温下 HF/H2O2/AgNO3 体系中的“一锅法”金属辅助化学刻蚀（MACE）方法制备了中轻度掺杂多孔硅纳米线（PSiNWs）。研究了 H2O2 浓度对硅纳米线（SiNWs）纳米结构的影响。实验结果表明，通过添加 H2O2 可以引入多孔结构，并且可以通过调整 H2O2 的浓度来控制孔结构。在刻蚀过程中，H2O2 物种取代 Ag(+) 作为氧化剂，Ag 纳米颗粒作为催化剂。H2O2 的浓度影响 Ag 颗粒的成核和迁移，从而导致纳米线内形成不同的多孔结构。提出了一种基于 Ag 颗粒在 H2O2 还原驱动力下催化的横向刻蚀的机制来解释 PSiNWs 的形成。
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