EMPA, Swiss Federal Laboratories for Materials Science and Technology, Mechanics of Micro-Materials and Nanostructures, Feuerwerkerstrasse 39, CH-3602 Thun, Switzerland.
ACS Appl Mater Interfaces. 2011 Oct;3(10):3866-73. doi: 10.1021/am200948p. Epub 2011 Sep 16.
Silicon nanowires (SiNWs) were produced by nanosphere lithography and metal assisted chemical etching. The combination of these methods allows the morphology and organization control of Si NWs on a large area. From the investigation of major parameters affecting the etching such as doping type, doping concentration of the substrate, we demonstrate the formation of new Si architectures consisting of organized Si NW arrays formed on a micro/mesoporous silicon layer with different thickness. These investigations will allow us to better understand the mechanism of Si etching to enable a wide range of applications such as molecular sensing, and for thermoelectric and photovoltaic devices.
采用纳米球光刻和金属辅助化学刻蚀的方法制备了硅纳米线（SiNWs）。这些方法的结合使得在大面积上对 SiNWs 的形态和组织控制成为可能。通过研究影响刻蚀的主要参数，如掺杂类型、衬底的掺杂浓度，我们展示了由在不同厚度的微/介孔硅层上形成的有序 SiNW 阵列组成的新型 Si 结构的形成。这些研究将帮助我们更好地理解 Si 刻蚀的机制，从而实现广泛的应用，如分子传感，以及用于热电和光伏器件。
