GREMAN, UMR CNRS 7347, Université de Tours, 16 rue P, et M, Curie, Tours Cedex 2, 37071, France.
Nanoscale Res Lett. 2012 Jul 3;7(1):367. doi: 10.1186/1556-276X-7-367.
In this paper, we study the electrochemical anodization of n-type heavily doped 4 H-SiC wafers in a HF-based electrolyte without any UV light assistance. We present, in particular, the differences observed between the etching of Si and C faces. In the case of the Si face, the resulting material is mesoporous (diameters in the range of 5 to 50 nm) with an increase of the 'chevron shaped' pore density with depth. In the case of the C face, a columnar morphology is observed, and the etch rate is twice greater than for the one for the Si face. We've also observed the evolution of the potential for a fixed applied current density. Finally, some wafer defects induced by polishing are clearly revealed at the sample surfaces even for very short etching times.
在本文中，我们研究了在无紫外光辅助的 HF 基电解液中对 n 型重掺杂 4H-SiC 晶片进行的电化学阳极氧化。我们特别介绍了在 Si 和 C 面刻蚀过程中观察到的差异。在 Si 面的情况下，得到的材料是介孔的（直径在 5 到 50nm 之间），并且随着深度的增加，“人字形”孔密度增加。在 C 面的情况下，观察到柱状形态，并且蚀刻速率是 Si 面的两倍。我们还观察了在固定施加电流密度下的电势演变。最后，即使在非常短的蚀刻时间内，在样品表面上也可以清楚地显示出由抛光引起的晶片缺陷。
