Semai Jugurtha, Gautier Gaël, Ventura Laurent
Laboratoire de Microelectronique de Puissance, University of Tours, 16 rue Pet M. Curie 37071, Tours Cedex, France.
J Nanosci Nanotechnol. 2009 Jun;9(6):3652-6. doi: 10.1166/jnn.2009.ns46.
Porous silicon (PS) formed from low doped silicon is reported to be a promising material for power electronic applications for electrical insulating. However, post-anodization steps on porous silicon, such as photolithography or metallization require the implementation of smooth porous silicon surfaces. In the present work, we use low doped (30-50 Omegacm) p-type Si. Our experiments allowed us the implementation of structures with pore dimensions extending from some micrometers (macroporous PS) to few nanometers (microporous Si). The use of a particular solution based on HF-H2O and acetic acid permitted to achieve microporous Si structures. The evaluation of the porosity versus the thickness is found to be a pertinent parameter to study the structure integrity of the so formed microporous silicon. Thus, layers with a thickness up to 400 microm have been implemented with a porosity of 50%.
据报道，由低掺杂硅形成的多孔硅（PS）是一种用于电力电子应用中电绝缘的有前途的材料。然而，多孔硅的阳极氧化后步骤，如光刻或金属化，需要光滑的多孔硅表面。在本工作中，我们使用低掺杂（30 - 50Ω·cm）的p型硅。我们的实验使我们能够实现孔尺寸从几微米（大孔PS）到几纳米（微孔硅）的结构。使用基于HF - H₂O和乙酸的特定溶液可以实现微孔硅结构。孔隙率与厚度的评估被发现是研究如此形成的微孔硅结构完整性的一个相关参数。因此，已经实现了厚度高达400微米、孔隙率为50%的层。
