Department of Physics, Shanghai Normal University, 100 Guilin Road, Shanghai 200234, China.
Nanoscale Res Lett. 2014 Oct 13;9(1):570. doi: 10.1186/1556-276X-9-570. eCollection 2014.
In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (T off) is crucial to form the uniform 4H-SiC mesopores. The pore diameter will not change if etching goes with T off. The hole concentration decreasing at the pore tips during the T off is the main reason for uniformity.
在这封信中，通过脉冲电化学蚀刻法制备了均匀的 4H 碳化硅（SiC）介孔。介孔的长度约为 19μm，直径约为 19nm。引入暂停时间（Toff）对于形成均匀的 4H-SiC 介孔至关重要。如果蚀刻过程中伴随着 Toff，则孔径不会发生变化。在 Toff 期间孔尖端处的空穴浓度降低是均匀性的主要原因。
