Li S B, Wu Z M, Jiang Y D, Li W, Liao N M, Yu J S
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, People's Republic of China.
Nanotechnology. 2008 Feb 27;19(8):085706. doi: 10.1088/0957-4484/19/8/085706. Epub 2008 Feb 4.
The influence of structure variation on the 1/f noise of nanometric boron doped hydrogenated polymorphous silicon (pm-Si:H) films was investigated. The films were grown by the conventional radio frequency plasma enhanced chemical vapor deposition (PECVD) method. Raman spectroscopy was used to reveal the crystalline volume fraction (X(c)) and crystal size of the pm-Si:H. The measurement of optical and structure properties was carried out with spectroscopic ellipsometry (SE) in the Tauc-Lorentz model. A Fourier transform infrared (FTIR) spectrometer was used to characterize the presence of nanostructure-sized silicon clusters in pm-Si:H film deposited on KBr substrate. The electrical properties of the films were measured using evaporated coplanar nickel as the electrode. A semiconductor system was designed to obtain the 1/f noise of pm-Si:H film as well as that of amorphous and microcrystalline silicon films. The results demonstrate that the 1/f noise of pm-Si:H is nearly as low as that of microcrystalline silicon and much lower than that of amorphous silicon. The disorder to order transition mechanism of crystallization was used to analyze the decrease of noise compared with amorphous silicon.
研究了结构变化对纳米硼掺杂氢化多晶硅（pm-Si:H）薄膜1/f噪声的影响。这些薄膜采用传统射频等离子体增强化学气相沉积（PECVD）方法生长。拉曼光谱用于揭示pm-Si:H的晶体体积分数（X(c)）和晶体尺寸。在Tauc-Lorentz模型中，利用光谱椭偏仪（SE）进行光学和结构性质的测量。使用傅里叶变换红外（FTIR）光谱仪对沉积在KBr衬底上的pm-Si:H薄膜中纳米结构尺寸的硅团簇的存在情况进行表征。使用蒸发共面镍作为电极测量薄膜的电学性质。设计了一个半导体系统来获取pm-Si:H薄膜以及非晶硅和微晶硅薄膜的1/f噪声。结果表明，pm-Si:H的1/f噪声几乎与微晶硅的一样低，且远低于非晶硅的。利用结晶的无序到有序转变机制分析了与非晶硅相比噪声降低的情况。
