拓扑材料。

Topological materials.

机构信息

Department of Physics, Stanford University, Stanford, CA 94305, USA.

出版信息

Rep Prog Phys. 2012 Sep;75(9):096501. doi: 10.1088/0034-4885/75/9/096501. Epub 2012 Aug 20.

Abstract

Recently, topological insulator materials have been theoretically predicted and experimentally observed in both 2D and 3D systems. We first review the basic models and physical properties of topological insulators, using HgTe and Bi(2)Se(3) as prime examples. We then give a comprehensive survey of topological insulators which have been predicted so far, and discuss the current experimental status.

摘要

最近，二维和三维系统中的拓扑绝缘体材料已经在理论上被预言，并在实验中被观察到。我们首先用 HgTe 和 Bi(2)Se(3) 作为主要例子，回顾拓扑绝缘体的基本模型和物理性质。然后，我们全面综述了迄今为止被预言的拓扑绝缘体，并讨论了当前的实验现状。