Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, People's Republic of China.
Nanotechnology. 2012 Sep 21;23(37):375303. doi: 10.1088/0957-4484/23/37/375303. Epub 2012 Aug 24.
In this paper we present a novel method of regulation to obtain graphene layers with homogeneous thickness by means of helium plasma implantation. The obtained graphene layers show neither large deep pits nor loss of lateral dimension. The etching rate can be precisely controlled (one to six atomic layers min(-1) or higher) and it remains consistent regardless of the thickness of the multilayer graphene. This approach is compatible with traditional complementary metal-oxide-semiconductor fabrication technologies and has great potential to modulate the performance of graphene for device applications.
本文提出了一种通过氦等离子体注入获得均匀厚度石墨烯层的新型调控方法。所得到的石墨烯层既没有大的深凹坑，也没有横向尺寸的损失。刻蚀速率可以精确控制（低至 1 分钟 1-6 个原子层或更高），且与多层石墨烯的厚度无关。这种方法与传统的互补金属氧化物半导体制造技术兼容，对于调节石墨烯器件应用的性能具有很大的潜力。
