SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, 300 Chunchun-dong, Jangan-gu, Suwon 440746, Republic of Korea.
ACS Nano. 2012 Sep 25;6(9):7781-8. doi: 10.1021/nn3017603. Epub 2012 Sep 5.
The intrinsic properties of initially p-type doped graphene (grown by chemical vapor deposition (CVD)) can be recovered by buffered oxide etch (BOE) treatment, and the dominant factor governing p-type doping is identified as the H(2)O/O(2) redox system. Semi-ionic C-F bonding prevents the reaction between the products of the H(2)O/O(2) redox system and graphene. BOE-treated graphene field effect transistors (FETs) subsequently exposed to air, became p-type doped due to recovery of the H(2)O/O(2) redox system. In comparison, poly(methyl methacrylate) (PMMA)-coated graphene FETs had improved stability for maintaining the intrinsic graphene electronic properties.
初始 p 型掺杂石墨烯（通过化学气相沉积（CVD）生长）的固有特性可以通过缓冲氧化物刻蚀（BOE）处理恢复，并且控制 p 型掺杂的主要因素被确定为 H(2)O/O(2)氧化还原系统。半离子 C-F 键阻止了 H(2)O/O(2)氧化还原系统产物与石墨烯之间的反应。随后暴露于空气中的 BOE 处理的石墨烯场效应晶体管（FET）由于 H(2)O/O(2)氧化还原系统的恢复而变为 p 型掺杂。相比之下，聚（甲基丙烯酸甲酯）（PMMA）涂覆的石墨烯 FET 具有更好的稳定性，可以保持本征石墨烯的电子特性。
