Department of Electronic Engineering, Tohoku University, Aoba 6-6-05, Aramaki-Aza, Sendai 980-8579, Japan.
ACS Nano. 2012 Oct 23;6(10):8508-15. doi: 10.1021/nn302290z. Epub 2012 Sep 12.
A transfer-free method for growing carrier-density-controlled graphene directly on a SiO(2) substrate has been realized for the first time by rapid-heating plasma chemical vapor deposition (RH-PCVD). Using this method, high-quality single-layer graphene sheets with a hexagonal domain can be selectively grown between a Ni film and a SiO(2) substrate. Systematic investigations reveal that the relatively thin Ni layer, rapid heating, and plasma CVD are critical to the success of this unique method of graphene growth. By applying this technique, an easy and scalable graphene-based field effect transistor (FET) fabrication is also demonstrated. The electrical transport type of the graphene-based FET can be precisely tuned by adjusting the NH(3) gas concentration during the RH-PCVD process.
一种无需转移的方法，首次通过快速加热等离子体化学气相沉积（RH-PCVD），直接在 SiO(2) 衬底上生长载流子密度可控的石墨烯。利用这种方法，可以在 Ni 薄膜和 SiO(2) 衬底之间选择性地生长高质量的具有六角形畴的单层石墨烯片。系统研究表明，相对较薄的 Ni 层、快速加热和等离子体 CVD 对这种独特的石墨烯生长方法的成功至关重要。通过应用这项技术，还展示了一种易于扩展的基于石墨烯的场效应晶体管（FET）的制造方法。通过调整 RH-PCVD 过程中的 NH(3) 气体浓度，可以精确调节基于石墨烯的 FET 的电输运类型。
