Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan, 430074, China.
Nanoscale Res Lett. 2012 Sep 3;7(1):496. doi: 10.1186/1556-276X-7-496.
The evolution of silica nanostructure morphology induced by local Si vapor source concentration gradient has been investigated by a smart design of experiments. Silica nanostructure or their assemblies with different morphologies are obtained on photoresist-derived three-dimensional carbon microelectrode array. At a temperature of 1,000°C, rope-, feather-, and octopus-like nanowire assemblies can be obtained along with the Si vapor source concentration gradient flow. While at 950°C, stringlike assemblies, bamboo-like nanostructures with large joints, and hollow structures with smaller sizes can be obtained along with the Si vapor source concentration gradient flow. Both vapor-liquid-solid and vapor-quasiliquid-solid growth mechanisms have been applied to explain the diverse morphologies involving branching, connecting, and batch growth behaviors. The present approach offers a potential method for precise design and controlled synthesis of nanostructures with different features.
通过实验设计的巧妙设计，研究了局部 Si 蒸汽源浓度梯度诱导的二氧化硅纳米结构形态的演变。在光刻胶衍生的三维碳微电极阵列上获得了具有不同形态的二氧化硅纳米结构或其组装体。在 1000°C 的温度下，随着 Si 蒸汽源浓度梯度的流动，可以得到绳状、羽毛状和章鱼状的纳米线组装体。而在 950°C 时，随着 Si 蒸汽源浓度梯度的流动，可以得到线状组装体、具有大接头的竹状纳米结构和具有较小尺寸的空心结构。蒸气-液体-固体和蒸气-准液体-固体生长机制都被应用于解释涉及分支、连接和批量生长行为的各种形态。本方法为具有不同特征的纳米结构的精确设计和控制合成提供了一种潜在的方法。
