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自组装单分子层功能化的半金属锰氧化物在分子自旋电子学中的应用。

Self-assembled monolayer-functionalized half-metallic manganite for molecular spintronics.

机构信息

Unité Mixte de Physique CNRS/Thales, 1 Avenue Auguste Fresnel, 91767 Palaiseau, and Université Paris-Sud, 91405 Orsay, France.

出版信息

ACS Nano. 2012 Oct 23;6(10):8753-7. doi: 10.1021/nn302458z. Epub 2012 Sep 6.

Abstract

(La,Sr)MnO(3) manganite (LSMO) has emerged as the standard ferromagnetic electrode in organic spintronic devices due to its highly spin-polarized character and air stability. Whereas organic semiconductors and polymers have been mainly envisaged to propagate spin information, self-assembled monolayers (SAMs) have been overlooked and should be considered as promising materials for molecular engineering of spintronic devices. Surprisingly, up to now the first key step of SAM grafting protocols over LSMO surface thin films is still missing. We report the grafting of dodecyl (C12P) and octadecyl (C18P) phosphonic acids over the LSMO half-metallic oxide. Alkylphosphonic acids form ordered self-assembled monolayers, with the phosphonic group coordinated to the surface and alkyl chains tilted from the surface vertical by 43° (C12P) and 27° (C18P). We have electrically characterized these SAMs in nanodevices and found that they act as tunnel barriers, opening the door toward the integration of alkylphosphonic acid//LSMO SAMs into future molecular/organic spintronic devices such as spin OLEDs.

摘要

镧锶锰氧化物(LSMO)作为标准的铁磁电极在有机自旋电子器件中得到了广泛的应用,这是由于其具有高度的自旋极化特性和空气稳定性。虽然有机半导体和聚合物主要被设想用于传播自旋信息,但自组装单层(SAMs)却被忽视了,应该被视为用于分子工程自旋电子器件的有前途的材料。令人惊讶的是,到目前为止,在 LSMO 表面薄膜上进行 SAM 接枝协议的第一步仍然缺失。我们报告了在 LSMO 半金属氧化物上接枝十二烷基(C12P)和十八烷基(C18P)膦酸的情况。烷基膦酸形成有序的自组装单层,其中膦酸基团与表面配位,烷基链相对于表面倾斜 43°(C12P)和 27°(C18P)。我们已经在纳米器件中对这些 SAM 进行了电特性表征,并发现它们作为隧道势垒,为将烷基膦酸/LSMO SAM 集成到未来的分子/有机自旋电子器件(如自旋 OLED )中开辟了道路。

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