Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan.
Adv Mater. 2012 Dec 4;24(46):6141-6. doi: 10.1002/adma.201202252. Epub 2012 Sep 10.
Extremely high current densities are realized in single-crystal ambipolar light-emitting transistors using an electron-injection buffer layer and a current-confinement structure via laser etching. Moreover, a linear increase in the luminance was observed at current densities of up to 1 kA cm(-2) , which is an efficiency-preservation improvement of three orders of magnitude over conventional organic light-emitting diodes (OLEDs) at high current densities.
采用电子注入缓冲层和激光刻蚀形成的电流限制结构，在单晶双极型发光晶体管中实现了极高的电流密度。此外，在高达 1 kA cm(-2) 的电流密度下，亮度呈线性增加，这是在高电流密度下，与传统有机发光二极管（OLED）相比，效率提高了三个数量级。
