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具有光栅谐振器的双极发光有机单晶晶体管。

Ambipolar light-emitting organic single-crystal transistors with a grating resonator.

机构信息

Department of Applied Physics, Graduate School of Advanced Science and Engineering, Waseda University, Tokyo 169-8555, Japan.

Department of Physics, Graduate School of Science, Tohoku University, Sendai 980-8578, Japan.

出版信息

Sci Rep. 2015 May 11;5:10221. doi: 10.1038/srep10221.

DOI:10.1038/srep10221
PMID:25959455
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC4426699/
Abstract

Electrically driven organic lasers are among the best lasing devices due to their rich variety of emission colors as well as other advantages, including printability, flexibility, and stretchability. However, electrically driven lasing in organic materials has not yet been demonstrated because of serious luminescent efficiency roll-off under high current density. Recently, we found that the organic ambipolar single-crystal transistor is an excellent candidate for lasing devices because it exhibits less efficient roll-off, high current density, and high luminescent efficiency. Although a single-mode resonator combined with light-emitting transistors (LETs) is necessary for electrically driven lasing devices, the fragility of organic crystals has strictly limited the fabrication of resonators, and LETs with optical cavities have never been fabricated until now. To achieve this goal, we improved the soft ultraviolet-nanoimprint lithography method and demonstrated electroluminescence from a single-crystal LET with a grating resonator, which is a crucial milestone for future organic lasers.

摘要

电驱动有机激光器因其丰富的发射颜色以及其他优点而成为最佳激光器件之一,这些优点包括可印刷性、柔韧性和可拉伸性。然而,由于在高电流密度下严重的发光效率滚降,电驱动有机材料中的激光尚未得到证实。最近,我们发现有机双极单晶晶体管是激光器件的绝佳候选者,因为它表现出较小的效率滚降、高电流密度和高发光效率。尽管具有单模谐振腔的发光晶体管(LET)对于电驱动激光器件是必需的,但是有机晶体的易碎性严格限制了谐振腔的制造,并且具有光学腔的 LET 直到现在都从未被制造过。为了实现这一目标,我们改进了软紫外纳米压印光刻方法,并展示了具有光栅谐振腔的单晶 LET 的电致发光,这是未来有机激光器的一个重要里程碑。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f38e/4426699/5d8e7abc8462/srep10221-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f38e/4426699/fb99d3d95ed4/srep10221-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f38e/4426699/22fa9bf459bc/srep10221-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f38e/4426699/51ae2f48ba17/srep10221-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f38e/4426699/5d8e7abc8462/srep10221-f4.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f38e/4426699/fb99d3d95ed4/srep10221-f1.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f38e/4426699/22fa9bf459bc/srep10221-f2.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f38e/4426699/51ae2f48ba17/srep10221-f3.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f38e/4426699/5d8e7abc8462/srep10221-f4.jpg

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本文引用的文献

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Sci Rep. 2012;2:985. doi: 10.1038/srep00985. Epub 2012 Dec 17.
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Current-confinement structure and extremely high current density in organic light-emitting transistors.有机发光晶体管中的电流限制结构和极高电流密度。
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