Park Jun-Mo, Pak Y Eugene, Chun Honggu, Lee Jong-Ho
School of Electrical Engineering and Inter-University Semiconductor Research Center (ISRC), Seoul National University, 151-742, Korea.
J Nanosci Nanotechnol. 2012 Jul;12(7):5160-3. doi: 10.1166/jnn.2012.6384.
In this paper, we propose a method for simulating nanopore structure by using conventional 3-D simulation tool to mimic the I-V behavior of the nanopore structure. In the simulation, we use lightly doped silicon for ionic solution where some parameters like electron affinity and dielectric constant are fitted to consider the ionic solution. By using this method, we can simulate the I-V behavior of nanopore structure depending on the location and the size of the sphere shaped silicon oxide which is considered to be an indicator of a DNA base. In addition, we simulate an Ionic Field Effect Transistor (IFET) which has basically the nanopore structure, and show that the simulated curves follow sufficiently the I-V behavior of the measurement data. Therefore, we think it is reasonable to apply parameter modeling mentioned above to simulate nanopore structure. The key idea is to modify electron affinity of silicon which is used to mimic the KCl solution to avoid band bending and depletion inside the nanopore. We could efficiently utilize conventional 3-D simulation tool to simulate the I-V behavior of nanopore structures.
在本文中，我们提出了一种方法，通过使用传统的三维模拟工具来模拟纳米孔结构，以模仿纳米孔结构的电流-电压（I-V）行为。在模拟中，我们使用轻掺杂硅来模拟离子溶液，其中一些参数如电子亲和势和介电常数经过拟合以考虑离子溶液。通过使用这种方法，我们可以根据被认为是DNA碱基指示剂的球形氧化硅的位置和大小来模拟纳米孔结构的I-V行为。此外，我们模拟了一种基本具有纳米孔结构的离子场效应晶体管（IFET），并表明模拟曲线充分遵循测量数据的I-V行为。因此，我们认为应用上述参数建模来模拟纳米孔结构是合理的。关键思想是修改用于模拟KCl溶液的硅的电子亲和势，以避免纳米孔内部的能带弯曲和耗尽。我们能够有效地利用传统的三维模拟工具来模拟纳米孔结构的I-V行为。
