Park Jun-Mo, Chun Honggu, Park Y Eugene, Park Byung-Gook, Lee Jong-Ho
J Nanosci Nanotechnol. 2014 Nov;14(11):8171-5. doi: 10.1166/jnn.2014.9906.
An Ion Field Effect Transistor (IFET) with nanopore structure was modeled in a conventional 3-dimensional (3-D) device simulator to understand current-voltage (I-V) characteristics and underlying physics of the device. Since the nanopore was filled with positive ions (K+) ions due to the negative interface charge on the insulator surface and negative gate bias condition, we could successfully simulate the IFET structure using modified p-type silicon to mimic KCl solution. We used p-type silicon with a doping concentration of 6.022 x 10(16) cm(-3) which has the same concentration of positive carriers (hole) as in 10(-4) M KCl. By controlling gate electric field effect on the mobility, the I-V curves obtained by the parameter modeling matched very well with the measured data. In addition, the decrease of [V(th)] with increasing V(DS) was physically analyzed.
为了理解具有纳米孔结构的离子场效应晶体管（IFET）的电流-电压（I-V）特性及该器件的基本物理原理，在传统的三维（3-D）器件模拟器中对其进行了建模。由于绝缘体表面的负界面电荷和负栅极偏置条件，纳米孔中充满了正离子（K⁺），因此我们可以使用经过改性的p型硅来模拟KCl溶液，从而成功地模拟IFET结构。我们使用了掺杂浓度为6.022×10¹⁶ cm⁻³ 的p型硅，其正载流子（空穴）浓度与10⁻⁴ M KCl中的相同。通过控制栅极电场对迁移率的影响，参数建模得到的I-V曲线与测量数据非常吻合。此外，还对随着V(DS)增加[V(th)]的降低进行了物理分析。
