Phenomenological analysis of random telegraph noise in amorphous TiOx-based bipolar resistive switching random access memory devices.

As dimensions of resistive random access memories (RRAMs) devices continue to shrink, the low-frequency noise of nanoscale devices has become increasingly important in evaluating the device reliability. Thus, we investigated random telegraph noise (RTN) caused by capture and emission of an electron at traps. We physically analyzed capture and emission processes through systematic measurements of amorphous TiOx (alpha-TiOx)-based bipolar RRAMs. RTNs were observed during high-resistance state (HRS) in most devices. However, discrete switching behavior was scarcely observed in low-resistance state (LRS) as most of traps in the alpha-TiOx were filled with mobile ions such as O2- in LRS. The capture and emission processes of an electron at traps are largely divided into two groups: (1) both capture and emission processes are mainly affected by electric field; and (2) one of the capture and emission processes is only influenced by the thermal process. This paper provides fundamental physics required to understand the mechanism of RTNs in alpha-TiOx-based bipolar RRAMs.