Multi-level characteristics of TiO transparent non-volatile resistive switching device by embedding SiO nanoparticles.

TiO-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO nanoparticles (NPs) into the TiO matrix (TiO@SiO NPs). The fully transparent resistive switching device is fabricated with an ITO/TiO@SiO NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiO@SiO NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.