Kwon Sera, Kim Min-Jung, Chung Kwun-Bum
Division of Physics and Semiconductor Science, Dongguk University, Seoul, 04620, Republic of Korea.
Sci Rep. 2021 May 10;11(1):9883. doi: 10.1038/s41598-021-89315-z.
TiO-based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO nanoparticles (NPs) into the TiO matrix (TiO@SiO NPs). The fully transparent resistive switching device is fabricated with an ITO/TiO@SiO NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiO@SiO NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications.
基于TiO的电阻开关器件最近作为下一代非易失性存储器件的一个有前途的候选者而受到关注。许多研究试图提高电阻开关器件的结构密度。制造多电平开关器件是增加存储单元密度的一种可行方法。在此，我们试图通过将SiO纳米颗粒（NPs）嵌入TiO基质（TiO@SiO NPs）中来获得一种高度透明的非易失性多电平开关存储器件。在玻璃基板上采用ITO/TiO@SiO NPs/ITO结构制造出了完全透明的电阻开关器件，其在可见光范围内的透过率超过95%。TiO@SiO NPs器件表现出出色的开关特性，如高开/关比、长保持时间、良好的耐久性以及可区分的多电平开关。为了通过调整设置电压来理解多电平开关特性，我们分析了每种电阻状态下的开关机制。这种方法代表了一种用于高性能非易失性多电平存储应用的有前途的方法。
