Scottish Universities Physics Alliance, School of Physics and Astronomy, University of St. Andrews, St. Andrews KY16 9SS, United Kingdom.
Phys Rev Lett. 2012 Sep 14;109(11):116401. doi: 10.1103/PhysRevLett.109.116401. Epub 2012 Sep 10.
We present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO(2). At 295 K we measure an in-plane resistivity of 2.6 μΩ cm, making PdCoO(2) the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T(5) temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20 μm, approximately 10(5) lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.
我们呈现了德拉弗斯石相 PdCoO(2) 单晶的德哈斯-范阿尔芬和电阻率数据。在 295 K 下，我们测量到面内电阻率为 2.6 μΩ·cm，这使得 PdCoO(2) 成为已知的最具导电性的氧化物。低温面内电阻率呈现出激活而不是通常的 T(5) 温度依赖性，这表明有效散射出现了能隙，这与声子拖拽一致。在 10 K 以下，输运平均自由程约为 20 μm，大约是 10(5) 个晶格间距，对于通量生长的晶体来说是一个惊人的高值。我们根据我们的数据讨论了这些性质的起源。
