Noguchi Ryo, Takahashi T, Kuroda K, Ochi M, Shirasawa T, Sakano M, Bareille C, Nakayama M, Watson M D, Yaji K, Harasawa A, Iwasawa H, Dudin P, Kim T K, Hoesch M, Kandyba V, Giampietri A, Barinov A, Shin S, Arita R, Sasagawa T, Kondo Takeshi
Institute for Solid State Physics, University of Tokyo, Kashiwa, Japan.
Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama, Japan.
Nature. 2019 Feb;566(7745):518-522. doi: 10.1038/s41586-019-0927-7. Epub 2019 Feb 11.
The major breakthroughs in understanding of topological materials over the past decade were all triggered by the discovery of the Z-type topological insulator-a type of material that is insulating in its interior but allows electron flow on its surface. In three dimensions, a topological insulator is classified as either 'strong' or 'weak', and experimental confirmations of the strong topological insulator rapidly followed theoretical predictions. By contrast, the weak topological insulator (WTI) has so far eluded experimental verification, because the topological surface states emerge only on particular side surfaces, which are typically undetectable in real three-dimensional crystals. Here we provide experimental evidence for the WTI state in a bismuth iodide, β-BiI. Notably, the crystal has naturally cleavable top and side planes-stacked via van der Waals forces-which have long been desirable for the experimental realization of the WTI state. As a definitive signature of this state, we find a quasi-one-dimensional Dirac topological surface state at the side surface (the (100) plane), while the top surface (the (001) plane) is topologically dark with an absence of topological surface states. We also find that a crystal transition from the β-phase to the α-phase drives a topological phase transition from a nontrivial WTI to a normal insulator at roughly room temperature. The weak topological phase-viewed as quantum spin Hall insulators stacked three-dimensionally-will lay a foundation for technology that benefits from highly directional, dense spin currents that are protected against backscattering.
在过去十年中,对拓扑材料认识的重大突破均由Z型拓扑绝缘体的发现所引发,这种材料内部绝缘但表面允许电子流动。在三维空间中,拓扑绝缘体可分为“强”或“弱”两类,强拓扑绝缘体的实验证实迅速跟上了理论预测。相比之下,弱拓扑绝缘体(WTI)至今尚未得到实验验证,因为拓扑表面态仅出现在特定的侧面上,而这些侧面在实际的三维晶体中通常难以检测到。在此,我们提供了碘化铋(β-BiI)中存在WTI态的实验证据。值得注意的是,该晶体具有可自然解理的顶面和侧面,它们通过范德华力堆叠在一起,这长期以来一直是实现WTI态实验所期望的。作为这种状态的决定性特征,我们在侧面((100)平面)发现了准一维狄拉克拓扑表面态,而顶面((001)平面)在拓扑上是暗的,没有拓扑表面态。我们还发现,晶体从β相到α相的转变在大约室温下驱动了从非平凡WTI到正常绝缘体的拓扑相变。弱拓扑相——被视为三维堆叠的量子自旋霍尔绝缘体——将为受益于高度定向、密集且受保护不发生背散射的自旋电流的技术奠定基础。